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PTF 10161 165 Watts, 869-894 MHz GOLDMOS (R) Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 165 Watts - Power Gain = 16.0 dB Typ - Drain Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability * * * * Typical Output Power & Efficiency vs. Input Power 180 60 Efficiency Output Power (Watts) Efficiency (%) 140 45 100 30 1234 1016 5600 1 5 5 VDD = 28.0 V 60 Output Power 20 0 1 2 3 4 5 6 7 8 0 IDQ = 1.5 A Total f = 880 MHz 15 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 165 W, IDQ = 1.5 A Total, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.5 A Total, f = 880 MHz) Drain Efficiency (VDD = 28 V, POUT = 165 W, IDQ = 1.5 A Total, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 165 W, IDQ = 1.5 A Total, f = 893.9, 894 MHz--all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps P-1dB h Y Min 15.0 165 45 -- Typ 16.0 180 50 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10161 Electrical Characteristics (per side) (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 5 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- 4.3 2.5 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens Maximum Ratings Parameter Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation at Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) (1) per side Symbol VDSS VGS TJ PD TSTG RqJC Value 65 20 200 500 2.85 -40 to +150 0.35 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Typical POUT (at P-1dB), Gain & Efficiency vs. Frequency 18 Output Power (W) 16 Gain (dB) 175 225 Broadband Test Fixture Performance 16 Gain 60 Output Power & Efficiency 14 Efficiency (%) Gain (dB) 40 Gain 14 125 12 VDD = 28 V IDQ = 1.5 A Total POUT = 165 W Return Loss (dB) 30 -20 5 -10 -15 10 -20 -25 0 895 12 Efficiency (%) IDQ = 1.5 A Total 75 10 10 865 870 875 880 885 890 25 895 8 865 870 875 880 885 890 Frequency (MHz) Frequency (MHz) 2 Return Loss VDD = 28 V Efficiency 50 e Typical Performance (cont.) Output Power vs. Supply Voltage 200 -10 PTF 10161 Intermodulation Distortion vs. Output Power VDD = 28 V -20 Output Power (Watts) 180 160 ICQ = 1.5 A Total f1 = 880.0 MHz f2 = 880.1 MHz 3rd order IMD (dBc) 30 140 120 100 80 60 40 18 20 22 24 26 28 -30 -40 -50 -60 30 IDQ = 1.5 A Total f = 894 MHz 50 70 90 110 130 150 170 Supply Voltage (Volts) Output Power (Watts-PEP) Capacitance vs. Supply Voltage (per side) * 600 500 95 85 Gate-Source Voltage vs. Case Temperature 1.03 1.02 Voltage normalized to 1.0 V Series show current (A) Cds & Cgs (pF) . Cgs 400 300 200 100 0 0 10 20 30 40 75 Crss (pF) 65 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 5 30 55 80 105 1.72 5 8.32 11.6 14.84 18.12 Cds VGS = 0 V f = 1 MHz 55 45 35 25 Crss 15 5 Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures. Case Temperature (C) 3 PTF 10161 Impedance Data OR e --- > D - WAVELENGTHS TOW ARD LOAD G TH S Frequency MHz 860 870 880 890 900 R Z Source W jX 1.6 0.8 0.3 0.1 -0.2 R 2.3 1.9 1.8 1.7 1.6 Z Load W jX -1.1 -1.7 -2.1 -1.8 -1.5 1.60 1.70 1.90 1.95 1.80 0.0 900 MHz 860 MHz 900 MHz Z Load 0.1 4 W EN AVE L 0.1 0.1 G G S TO W A RD G Z Source D Z Load ENE RAT Z Source 860 MHz 0.2 VDD = 28 V, IDQ = 1.5 A Total, POUT = 165 W Z0 = 50 W e Test Circuit PTF 10161 Schematic for f = 894 MHz D1, D2 PTF 10161 0.255 l 894 MHz Microstrip 52.3 W 0.121 l 894 MHz Microstrip 22.1 W 0.097 l 894 MHz Microstrip 37.3 W 0.482 l 894 MHz Microstrip 27.8 W 0.016 l 894 MHz Microstrip 27.8 W 0.052 l 894 MHz Microstrip 27.8 W 0.013 l 894 MHz Microstrip 22.2 W 0.065 l 894 MHz Microstrip 22.2 W 0.048 l 894 MHz Microstrip 13.1W 0.024 l 894 MHz Microstrip 10.4 W 0.017 l 894 MHz Microstrip 10.3 W 0.105 l 894 MHz Microstrip 8.4 W 0.080 l 894 MHz Microstrip 8.4 W 0.010 l 894 MHz Microstrip 8.4 W 0.120 l 894 MHz Microstrip 37.3 W 0.093 l 894 MHz Microstrip 28.9 W .031" Thick, er = 4.0, 2 oz. Copper, G200, Cirexx C1, C8, C12, C19 Capicitor, Ceramic Chip, .01 F Digi-Key PCC103BNCT-ND C2, C9, C14, C15, C21, C22 Capicitor, 10 f, 35V, Tantalum TE series SMD Digi-Key PCS6 106TR-ND C3, C10, C13, C17, C18, C20 Capicitor, 33 pF 100B 330 C4, C7 Capicitor, 15 pF 100B 150 C6 Capicitor, 11 pF 100B 110 C5 Capicitor, 1.7 pF 100B 1R7 C11 Capicitor, 3.0 pF 100B 3R0 C16 Capicitor, 5.1 pF 100B 5R0 J1, J2 Connector, SMA, Female, Panel Mount 1301-RPM 513 412/53 L1, L2 4 Turns, 22 AWG, .120" I.D. R1, R2, R3, R4 Chip Resistor 1/8W-5% SMD, 510 ohm 1206 Digi-Key PXX*KECT-ND R5, R6 Resistor, 220 ohm Digi-Key 220QBK-ND l6, l23 l1, l28 l2 l3 l4, l25 l5, l24 l7, l8 l9, l10 l11, l12 l13, l14 l15, l16 l17, l18 l19, l 20 l21, l22 l 26 l 27 Circuit Board 5 PTF 10161 Test Circuit (cont.) e e 10161 Assembly Diagram (not to scale) Artwork (not to scale) 6 e Case Outline Specifications Package 20250 PTF 10161 1 1 2 3 3 Primary dimensions are inches; alternate dimensions are mm. Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1999, 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 10161 Uen Rev. A 01-16-01 7 |
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